Growth and Characterization of SiGe Nanocrystals on Insulator for Third Generation Solar Cells
This research project aims to overcome current challenges in the integration of silicon-germanium (SiGe)
nanocrystals into third-generation photovoltaic cells by developing innovative growth methods and
understanding the underlying physical phenomena. By exploring cutting-edge growth techniques such as
molecular beam epitaxial (MBE) growth and chemical vapor deposition (CVD) growth, we seek to
produce SiGe nanocrystals with high purity and no crystal defects. In parallel, we study the optical,