اكرام حسونة قيزاني

Transport and dielectric properties of MIS structure with embedded Si QDs (AuPd/SiO2:Si QDs/n-Si) grown by MBE

Electrical characterization of a single‑crystalline Si quantum well formed by thermal oxidation of ultrathin silicon‑on‑insulator film (Al/ SiO2:c‑Si QW/n‑Si) for optoelectronic applications