Nano devices, Nano materials, Nano characterization, Definition of Technology node, Basic CMOS Process flow, MOS Scaling theory, Issues in scaling MOS transistors (Short channel effects), Description of a typical 65 nm CMOS technology, MOS capacitor, Role of interface quality, Gate oxide thickness scaling trend, SiO2 vs High-k gate dielectrics, Integration issues of high-k, Interface states, bulk charge, band offset, stability, Vertical transistors FinFET, Surround gate FET, Germanium Nano MOSFETs strain, quantization, Advantages of Germanium over Silicon, PMOS versus NMOS, Compound semiconductors material properties, MESFETs Compound semiconductors MOSFETs in the context of channel quantization strain, Hetero structure MOSFETs exploiting novel materials, strain, quantization, Emerging nano materials (Nanotubes, nanorods and other nano structures), LB technique, Soft lithography etc, and Microwave assisted synthesis, Self-assembly etc.