Advancements in optoelectronic imaging: deformation characteristics and efficiency improvements using graphene-based devices

An efficient optoelectronic integrated device for overcoming image smearing from pixelless image up-conversion is presented. This device consists of a graphene layer photodetector (GLPD) with a light-emitting diode (LED). The conversion of images from FIR to NIR is devised using the GLPD-LED instrument. Hence, the characteristics of image conversion by the GLPD-LED imaging device are of primary concern. The fundamental characteristics of GLPD-LED instruments are resolution, contrast transfer, and converted efficiency of the image. Consequently, explicit solutions and analysis for the image conversion characteristics of GLPD-LED imaging devices are investigated. These implemented solutions are used to devise the proposed GLPD-LED structure. The behavior of the GLPD-LED imaging instrument is influenced by structural design parameters. The elementary device parameters include the number of GLs, the thickness of graphene, the length of the GL, and the thickness of the light-emitting diode instrument. In addition, optimizing the GLPD-LED device structure is an essential goal. The optimum performance of the GLPD-LED device is realized with an estimated number of graphene layers, biasing voltage, and operating temperature of 15, 0.777 V, and 1500 K, respectively. It is observed that image smearing can be mitigated by addressing non-radiative recombination within the LED, the injection of extra carriers from graphene layers, and the non-uniform distribution of incident infrared radiation. These parameters increase carrier trapping within the LED device. Also, it causes variations in image characteristics. The oscillating contrast of the imaging device is managed by adjusting the thickness of the graphene layers and the LED structure. The proposed results of the GLPD-LED device confirm a further reduction of photons’ re-absorption effect compared with that of quantum nanotechnology. Thus, the performance of the GLPD-LED device is superior to that of quantum nanotechnology devices. Conversely, a non-negligible amount of re-absorbed photons still exists. The insights gained from the GLPD-LED device’s efficiency and structural optimization could also be extended to applications in solar cells and other optoelectronic devices, leveraging graphene’s superior conductivity and optical properties. Consequently, a heterostructure bipolar transistor (HBT) is necessary in the integration process for future improvement of this device.