Growth and transport properties of AgInS2 ternary semiconductor

A technique based on the Bridgman method was used to make single crystals of AgInS2. X-ray diffraction was used to determine the crystal structure (XRD). An energy-dispersive X-ray fluorescence spectrometer was used to determine the crystals’ atomic composition (EDXRF). The lattice constant and Wyckoff locations for AgInS2 crystal are determined using Rietveld refinement analysis. Temperatures ranging from 128 to 628 K were used to assess electrical conductivity, Hall effect, and thermoelectric power (TEP). Various physical characteristics for both majority and minority carriers were estimated during these studies, including carrier mobilities, carrier concentration, effective masses of charge carriers, diffusion coefficient, relaxation time, and diffusion length. Furthermore, the activation energy was discovered to be 0.132 eV, and the energy gap width to be 1.86 eV. The thermal power factor, the electronic thermal conductivity, and the figure of merit were calculated for all samples. All crystals were found to be of p-type conductivity.