Influence Of Ampoule Diameter On Structure Of TlBiTe2 Crystals
Abstract
X – ray analysis technique, for two grown crystals, was applied to obtain many crystal parameters like crystal lattice, grain size, micro-strain,
dislocation density, dislocation arrangement, and the distance between two dislocations of TlBiTe2. Two crucibles (1.3 cm and 1.5 cm) were used for
growing the crystals. This enabled us to compare influence of the ampoule diameter on the crystal quality in the framework of the Marangoni effect. The
crystals were grown by a special modification of the well-known vertical Bridgman – Stockbarger technique. The Bragg peak line profile analysis of TlBiTe2 crystals were done by using Scherer's equation, Williamson – Hall plot, and Warren - Averbach method. We concluded that the grown crystals are rhombohedral TlBiTe2 crystals. Results showed that the n-type TlBiTe2 is a very sensitive semiconductor the growth conditions especially the ampoule diameter