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Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO2: Ge QDs/n-Si) grown by MBE

Author name : ABDULLAH KAREEM ABDULRAHMAN ALADIM
Publication Date : 2024-07-15
Journal Name : Physica B: Condensed Matter

Abstract

Monocrystalline Germanium quantum dots (Ge QDs), grown by molecular beam epitaxy (MBE), are intricately embedded within a SiO2 oxide layer of a metal-insulator-semiconductor (MIS) structure, catering to optoelectronic applications. These monocrystalline Ge QDs exhibit high density (D ∼ 5 x 1012 cm−2), possess a spherical morphology, and an average size of 6 nm with narrow size distribution. A comprehensive investigation into the influence of these quantum dots on the electrical transport and dielectric properties of the metal-insulator-semiconductor (MIS) structure was conducted through current-voltage (I–V) spectroscopy and impedance spectroscopy. Notably, I–V measurements demonstrate that Ge QDs enhance conduction phenomena, thereby improving electrical transport within the MIS structure. Furthermore, the capacitance-voltage (C–V) and conductance-voltage (G-V) measurements, spanning

Keywords

Ge QDs MBE growth Metal-insulator-semiconductor Structural properties Electrical properties Dielectric properties

Publication Link

https://doi.org/10.1016/j.physb.2024.415962

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