Structural characterization and dielectric properties of low energy hydrogen beam irradiated PVA/ZnO nanocomposite materials

In this work, flexible composite PVA/ZnO films made of both PVA and ZnO were created using the solution casting technique for application in storage devices. The 4.5x1017, 9.0x1017, and 13.5 × 1017 ions.cm−2 hydrogen fluence were used to irradiate the PVA/ZnO films. XRD, SEM and FTIR techniquesare used to examine the successful creation of the composite films. Additionally, the conductivity, impedance, and modulus were recorded at frequencies between 102 Hz and 5 MHz for pure and irradiated films. By raising the ion fluence to 13.5 × 1017 ions.cm−2, the dielectric constant was enhanced from 8.86 to 42.2, and electrical conductivity rose from 0.38 × 10-7 S/cm to 3.04 × 10-7 S/cm. A decrease from 11.6 eV to 4.35 eV in the potential barrier energy Wm was also induced after irradiation. As a result of these findings, irradiated PVA/ZnO samples could now be used in a wide range of applications, such as energy storage and microelectronics, because of their modified in structural and dielectric properties.